发明名称 |
SEMICONDUCTOR MEMORY |
摘要 |
According to one embodiment, a semiconductor memory includes a first block array including first to n-th blocks (n is a natural number of 2 or more) arranged in a first direction, each of the first to n-th blocks including a first memory cell, a first conductive line extending in the first direction, and shared by the first to n-th blocks, first to n-th current amplifiers corresponding to the first to n-th blocks, the i-th current amplifier (i is one of 1 to n) including an input terminal and an output terminal, the input terminal of the i-th current amplifier being electrically connected to the first memory cell in the i-th block, the output terminal of the i-th current amplifier being electrically connected to the first conductive line, and a sense amplifier electrically connected to the first conductive line. |
申请公布号 |
US2016196873(A1) |
申请公布日期 |
2016.07.07 |
申请号 |
US201615070685 |
申请日期 |
2016.03.15 |
申请人 |
Kabushiki Kaisha Toshiba |
发明人 |
NOGUCHI Hiroki;FUJITA Shinobu |
分类号 |
G11C13/00;G11C11/16;G11C11/419 |
主分类号 |
G11C13/00 |
代理机构 |
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代理人 |
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主权项 |
1. A semiconductor memory comprising:
a first block array including first to n-th blocks (n is a natural number of 2 or more) arranged in a first direction, each of the first to n-th blocks including a first memory cell; a first conductive line extending in the first direction, and shared by the first to n-th blocks; first to n-th current amplifiers corresponding to the first to n-th blocks, the i-th current amplifier (i is one of 1 to n) including an input terminal and an output terminal, the input terminal of the i-th current amplifier being electrically connected to the first memory cell in the i-th block, the output terminal of the i-th current amplifier being electrically connected to the first conductive line; and a sense amplifier electrically connected to the first conductive line. |
地址 |
Minato-ku JP |