| 摘要 |
A semiconductor device is provided, in which drivability of a transistor in a peripheral circuit region is improved. The peripheral circuit region includes a second semiconductor region formed on the semiconductor substrate, a second gate insulating film thinner than a first gate insulating film, a second gate electrode formed on the second gate insulating film, and source and drain regions formed at both sides of the second gate electrodes in the second semiconductor region and doped with an impurity of first conductivity. The source and drain regions include a p-type low-concentration impurity region having an impurity of first conductivity in relatively low concentration and a p-type high-concentration impurity region having an impurity of first conductivity in relatively high concentration.
|
