| 发明名称 |
Magnetic random access memory |
| 摘要 |
A magnetic random access memory (MRAM) using a common line is described herein. An MTJ element is positioned on the common line of the MRAM. The common line connected to a source of a transistor transmits a ground level voltage for reading data and supplies a current for writing data.
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| 申请公布号 |
US2003214839(A1) |
申请公布日期 |
2003.11.20 |
| 申请号 |
US20020335437 |
申请日期 |
2002.12.30 |
| 申请人 |
JANG IN WOO;PARK YOUNG JIN;LEE KYE NAM;KIM CHANG SHUK;KYUNG HEE |
发明人 |
JANG IN WOO;PARK YOUNG JIN;LEE KYE NAM;KIM CHANG SHUK;KYUNG HEE |
| 分类号 |
G11C11/15;G11C11/16;H01L21/8246;H01L27/105;H01L27/22;H01L43/08;(IPC1-7):G11C11/15 |
主分类号 |
G11C11/15 |
| 代理机构 |
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