| 发明名称 | Low quiescent current pull-down circuit | ||
| 摘要 | A device to detect an electrical signal is provided. The device includes sensing, output, and pull-down nodes. The device includes a pull-down circuit having a native metal-oxide-semiconductor field-effect transistor (MOSFET) to pull down the output node to approximately a voltage of the pull-down node. The device includes a switch circuit having a junction field-effect transistor (JFET). The JFET turns on the pull-down circuit in response to a voltage of the sensing node being less than a first threshold. The JFET also turns off the pull-down circuit in response to the voltage of the sensing node being greater than the first threshold. | ||
| 申请公布号 | US9391519(B2) | 申请公布日期 | 2016.07.12 |
| 申请号 | US201414311907 | 申请日期 | 2014.06.23 |
| 申请人 | Analog Devices Global | 发明人 | Lu Danzhu;Gong Xiaohan;Shao Bin |
| 分类号 | H03K3/356;H02M3/158;H03K19/017 | 主分类号 | H03K3/356 |
| 代理机构 | Schwegman Lundberg & Woessner, P.A. | 代理人 | Schwegman Lundberg & Woessner, P.A. |
| 主权项 | 1. An electrical signal detection circuit comprising: a sensing node; an output node; a pull-down node; a first pull-down circuit including a native metal-oxide-semiconductor field-effect transistor (MOSFET) to pull down the output node to approximately a voltage of the pull-down node; and a switch circuit including a junction field-effect transistor (JFET) that turns on the first pull-down circuit in response to a voltage of the sensing node being less than a first threshold, and turns off the first pull-down circuit in response to the voltage of the sensing node being greater than the first threshold. | ||
| 地址 | Hamilton BM | ||