Silicon DBR structure-integrated light element, and preparation method

摘要

The present invention relates to a silicon DBR structure-integrated light device, and a preparation method thereof, and more specifically, to a silicon DBR structure-integrated light device or vertical cavity light emitting diode, and a preparation method thereof, enabling preparation by a small number of layers and capable of reducing process time and costs due to a large contrast in refractive index of a silicon DBR structure formed by depositing silicon in a slanted or vertical manner.

主权项

1. A silicon distributed Bragg reflector (DBR) structure-integrated light device, comprising:
a bottom reflector layer formed by alternately stacking two semiconductor material layers having different indices of refraction; an n-type ohmic contact layer formed on an upper surface of the bottom reflector layer; an active layer formed on an upper surface of the n-type ohmic contact layer, and configured to generate light through recombination of electrons and holes injected through at least one oxidizable layer having a current injection hole formed at a center thereof, wherein the at least one oxidizable layer is encompassed by the active layer; a p-type ohmic contact layer formed on an upper surface of the active layer; a top reflector layer formed on an upper surface of the p-type ohmic contact layer and having a silicon DBR structure in which at least one first silicon layer and at least one second silicon layer having different indices of refraction are alternately stacked; and n-type and p-type electrodes formed on the upper surfaces of the n-type and p-type ohmic contact layers, respectively, wherein the first silicon layer has a lower index of refraction than the second silicon layer and is obliquely deposited on the p-type ohmic contact layer to have a varying index of refraction by adjusting an inclination of the first silicon layer, and the second silicon layer is deposited perpendicular to a plane of the p-type ohmic contact layer, and wherein the active layer directly contacts with each of the p-type ohmic contact layer and the n-type ohmic contact layer.