Magnetic memory devices having perpendicular magnetic tunnel structures therein

摘要

Magnetic memory cells include a magnetic tunnel junction and a first electrode, which is electrically coupled to the magnetic tunnel junction by a first conductive structure. This conductive structure includes a blocking layer and a seed layer, which extends between the blocking layer and the magnetic tunnel junction. The blocking layer is formed as an amorphous metal compound. In some of the embodiments, the blocking layer is a thermally treated layer and an amorphous state of the blocking layer is maintained during and post thermal treatment.

主权项

1. A magnetic memory device, comprising:
first and second perpendicular magnetic structures having a tunnel barrier layer therebetween; an electrode separated from the tunnel barrier layer by the first perpendicular magnetic structure; and a blocking layer extending between the first perpendicular magnetic structure and the electrode, said blocking layer comprising an amorphous metal compound.