Junctionless nano-electro-mechanical resonant transistor

摘要

A junctionless Nano-Electro-Mechanical (NEM) resonator, comprising a highly doped conductive channel connecting a drain region and a source region; the conduction channel region is movable and the overall structure is fixed at least at these two ends placed on acting the source and drain regions, respectively; at least one fixed gate electrode arranged to control a depletion charge in the highly doped conductive channel thereby modulating dimensions of a cross-section of the highly doped conductive channel. A dimension of the cross-section in the direction of an electrical field that is oriented from the fixed gate electrode to the highly doped conductive channel, is designed in such a way that it can be reduced under the effect of the depletion charge such that a full depletion in the highly doped conductive channel is achievable with the control of the fixed gate electrode.

主权项

1. A junctionless Nano-Electro-Mechanical (NEM) resonant transistor, comprising:
a highly doped conductive channel with a doping concentration equal or higher than 2×1018 donors or acceptors atoms/cm3, forming a device channel that is placed between two other highly doped regions of same type of either donors or acceptors, the two other highly doped regions being called respectively a drain region and a source region, thereby forming a junctionless n+/n+/n+ or p+/p+/p+ structure, whereby two ends of the source region and drain region are mechanically fixed while an overall body of the structure is suspended and movable under the action of an electric field, at least one fixed gate electrode arranged to control a depletion charge in the highly doped conductive channel thereby modulating dimensions of a cross-section of the highly doped conductive channel, together with an electromechanical actuation of the overall body of the structure, whereby the dimension of the cross-section in the direction of an electrical field that is oriented from the fixed gate electrode to the highly doped conductive channel, is designed in such a way that it can be reduced under the effect of the depletion charge such that a partial or a full depletion in the highly doped conductive channel is achievable with the control of the at least one fixed gate electrode.