发明名称 Light emitting diode chip having electrode pad
摘要 Disclosed herein in an LED chip including electrode pads. The LED chip includes a semiconductor stack including a first conductive type semiconductor layer, a second conductive type semiconductor layer on the first conductive type semiconductor layer, and an active layer interposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer, a first electrode pad located on the second conductive type semiconductor layer opposite to the second conductive type semiconductor layer; a first electrode extension extending from the first electrode pad and connected to the first conductive type semiconductor layer; a second electrode pad electrically connected to the second conductive type semiconductor layer; and an insulation layer interposed between the first electrode pad and the second conductive type semiconductor layer. The LED chip includes the first electrode pad on the second conductive type semiconductor layer, thereby increasing a light emitting area.
申请公布号 US9397264(B2) 申请公布日期 2016.07.19
申请号 US201514630273 申请日期 2015.02.24
申请人 SEOUL VIOSYS CO., LTD. 发明人 Kim Ye Seul;Kim Kyoung Wan;Yoon Yeo Jin;Oh Sang Hyun;Lee Keum Ju;Lee Jin Woong;Jeong Da Yeon;Woo Sang Won
分类号 H01L33/38;H01L33/10;H01L33/40;H01L33/44;H01L33/60;H01L33/36;H01L33/42;H01L33/46;H01L33/00;H01L33/20 主分类号 H01L33/38
代理机构 Perkins Coie LLP 代理人 Perkins Coie LLP
主权项 1. A light emitting diode (LED) comprising: a substrate having a first edge, a second edge opposite to the first edge, a third edge connecting the first edge to the second edge, and a fourth edge opposite to the third edge; a semiconductor stack disposed over a first surface of the substrate, the semiconductor stack comprising: a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, and an active layer interposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer; a first electrode pad electrically connected to the first conductivity-type semiconductor layer and disposed over the second conductivity-type semiconductor layer and on at least a portion of the first edge of the substrate; a first electrode extension extending from the first electrode pad along at least a portion of the first edge and at least a portion of the third edge, the first electrode extension electrically connected to the first conductivity-type semiconductor layer; a second electrode pad electrically connected to the second conductivity-type semiconductor layer, wherein the second electrode pad is disposed over the second conductively-type semiconductor layer and on at least a portion of the second edge of the substrate; a first insulation layer interposed between the first electrode pad and the second conductivity-type semiconductor layer; a second insulation functional layer interposed between the second electrode pad and the second conductivity type semiconductor layer; and a transparent conductive layer disposed over the second conductivity-type semiconductor layer and between the second electrode extension and the second conductivity type semiconductor layer, wherein the transparent conductive layer is separated from the first insulation layer.
地址 Ansan-Si KR