Programmable logic device

摘要

To obtain a PLD that achieves high-speed configuration capable of dynamic configuration, consumes less power, and has a short startup time and a PLD that has a smaller number of transistors or a smaller circuit area than a PLD using an SRAM as a configuration memory, a plurality of logic elements arranged in an array and a switch for selecting electrical connection between the logic elements are provided. The switch includes a first transistor including a multilayer film including an oxide layer and an oxide semiconductor layer, a node that becomes floating when the first transistor is turned off, and a second transistor in which electrical continuity between a source and a drain is determined based on configuration data held at the node.

主权项

1. A semiconductor device comprising:
a first programmable logic element; a second programmable logic element; a switch comprising a first circuit group and a second circuit group; and a first wiring, wherein each of the first circuit group and the second circuit group comprises a first transistor and a second transistor, wherein a first terminal of the first transistor of each of the first circuit group and the second circuit group is electrically connected to a gate of the second transistor of the corresponding one of the first circuit group and the second circuit group, wherein a second terminal of the first transistor of each of the first circuit group and the second circuit group is electrically connected to the first wiring, wherein a first terminal of the second transistor of each of the first circuit group and the second circuit group is electrically connected to the first programmable logic element, wherein a second terminal of the second transistor of each of the first circuit group and the second circuit group is electrically connected to the second programmable logic element, wherein the switch comprises a third transistor configured to short the first programmable logic element and the second programmable logic element when data is written into the gate of the second transistor of each of the first circuit group and the second circuit group, wherein the first transistor comprises a gate electrode and a multilayer film with a gate insulating film therebetween, wherein the multilayer film comprises a first oxide layer, an oxide semiconductor layer over the first oxide layer and comprising a channel formation region, and a second oxide layer over the oxide semiconductor layer, and wherein the first oxide layer and the second oxide layer have a larger energy gap than the oxide semiconductor layer and comprise indium.