METHOD OF PROCESSING TARGET OBJECT

摘要

Even when an aspect ratio of an opening of a mask is high, uniformity of the thickness of a silicon oxide layer formed on a to-be-treated object is reduced. A method for processing a to-be-treated object according to an embodiment of the present invention forms a silicon oxide layer by repeating a sequence including a) a first process of forming a reactive precursor on a to-be-treated object by generating plasma of a first gas including a halogenated silicon gas within a processing container of a plasma processing device; b) a second process of generating plasma of a noble gas within the processing container after the first process; c) a third process of forming a silicon oxide layer by generating plasma of a second gas including an oxygen gas within the processing container after the second process; and d) a fourth process of generating plasma of a noble gas within the processing container after the third process.