SUBSTRATE PROCESSING METHOD

摘要

PROBLEM TO BE SOLVED: To extend Q time that ranges from removal of a silicon oxide film to formation of a silicon germanium film and lower pre-bake temperature in the formation of the silicon germanium film.SOLUTION: In a substrate processing apparatus 1, after a silicon oxide film on one main surface of a substrate 9 is removed at an oxide film removal part 4, silylation material is provided and silylation treatment is performed on the main surface in a silylation treatment part 6. This treatment can extend Q time which ranges from removal of the silicon oxide film to formation of a silicon germanium film and lower pre-bake temperature in the formation of the silicon germanium film.SELECTED DRAWING: Figure 1