METHOD FOR MANUFACTURING A FRONT ELECTRODE OF A SEMICONDUCTOR DEVICE

摘要

The present invention provides a method for manufacturing a front electrode of a semiconductor device. The method includes using an electrically conductive paste composed of a glass-free corrosion binder, a metallic powder and an organic carrier. The corrosion binder is one or more Pb—Te based crystalline compounds having a fixed melting temperature in a range of 440° C. to 760° C. During a sintering process of the electrically conductive paste for forming an electrode, the glass-free corrosion binder is converted into a liquid for easily corroding and penetrating an antireflective insulating layer on a front side of the solar cell, so that a good ohmic contact is formed. At the same time, the electrically conductive metallic powder is wetted, and the combination of the metallic powder is promoted. As a result, a high-conductivity front electrode of a crystalline silicon solar cell is formed.

主权项

1. A method for manufacturing a front electrode of a semiconductor device, the method comprising:
providing a semiconductor device including an insulation surface coating; printing an electrically conductive paste overlying a patterned contact region of the insulation surface coating, the electrically conductive paste comprising:
a metallic powder with a weight composition ranging from 70 to 95 wt % based on a given total weight of the electrically conductive paste;a glass-free corrosion binder made from a plurality of Pb—Te—O-based crystalline particles with a weight composition ranging from 0.5 to 12 wt % based on the given total weight;an organic carrier with a weight composition ranging from 4.5 to 25 wt % based on the given total weight;wherein the glass-free corrosion binder is one or a combination of two or more Pb—Te—O based crystalline compounds, having a fixed melting temperature; sintering the electrically conductive paste overlying the patterned contact region of the insulation surface coating, wherein the sintering comprises:
drying the electrically conductive paste at a first temperature range from 180° C. to 260° C. for 30 s up to 70 s;heating up to a second temperature range from 720° C. to 950° C. for 20 s up to 50 s; andcooling back to 25° C. to form an electrode;wherein the drying and heating from the first temperature range to the second temperature range are associated with releasing of the organic carrier, melting of the glass-free corrosion binder at the fixed melting temperature after the releasing of the organic carrier, and forming of a metallic bulk from the metallic powder wet by molten glass-free corrosion binder;wherein the molten glass-free corrosion binder induces etch-removing of the insulation surface coating at the patterned contact region to form an ohmic contact between the metallic bulk and the crystalline silicon solar cell.