SEMICONDUCTOR DEVICE

摘要

The semiconductor device includes: a semiconductor layer in which a trench is formed having a side surface and a bottom surface; a second conductivity-type layer formed on the semiconductor layer on the side surface and the bottom surface of the trench; a first conductivity-type layer formed on the semiconductor layer so as to contact the second conductivity-type layer; a first electrode electrically connected to the first conductivity-type layer; a second electrode embedded in the trench and electrically connected to the second conductivity-type layer; and a barrier-forming layer which is arranged between the second electrode and the side surface of the trench and which, between said barrier-forming layer and the second conductivity-type layer, forms a potential barrier higher than the potential barrier between the second conductivity-type layer and the second electrode.

主权项

1. A semiconductor device comprising:
a semiconductor layer in which a trench having a side surface and a bottom surface is formed; a second conductivity type layer formed in the semiconductor layer on the side surface and the bottom surface of the trench; a first conductivity type layer formed in the semiconductor layer so as to be contiguous to the second conductivity type layer; a first electrode electrically connected to the first conductivity type layer; a second electrode that is embedded in the trench and that is electrically connected to the second conductivity type layer; and a barrier-forming layer that is disposed between the side surface of the trench and the second electrode and that forms a potential barrier between the barrier-forming layer and the second conductivity type layer higher than a potential barrier between the second conductivity type layer and the second electrode.