| 发明名称 |
MAGNETORESISTIVE ELEMENT, METHOD OF MANUFACTURING MAGNETORESISTIVE ELEMENT, AND MEMORY DEVICE |
| 摘要 |
According to one embodiment, a magnetoresistive element includes a first magnetic layer, an insulating layer on the first magnetic layer, a second magnetic layer on the insulating layer, and an aluminum boride layer on the second magnetic layer. |
| 申请公布号 |
US2016260773(A1) |
申请公布日期 |
2016.09.08 |
| 申请号 |
US201514830028 |
申请日期 |
2015.08.19 |
| 申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
KITAGAWA Eiji;AMANO Minoru |
| 分类号 |
H01L27/22;H01L43/10;H01L43/12;H01L43/02 |
主分类号 |
H01L27/22 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A magnetoresistive element comprising:
a first magnetic layer; an insulating layer on the first magnetic layer; a second magnetic layer on the insulating layer; and an aluminum boride layer on the second magnetic layer. |
| 地址 |
Tokyo JP |
