| 摘要 |
The present invention provides a semiconductor structure, including a substrate, having a fin structure disposed thereon, a gate structure, crossing over parts of the fin structure. The top surface of the fin structure which is covered by the gate structure is defined as a first top surface, and the top surface of the fin structure which is not covered by the gate structure is defined as a second top surface. The first top surface is higher than the second top surface, and a spacer covers the sidewalls of the gate structure. The spacer includes an inner spacer and an outer spacer, and the outer pacer further contacts the second top surface of the fin structure directly. |
| 主权项 |
1. A semiconductor structure, comprising:
a substrate, having a fin structure disposed thereon; a gate structure, crossing over parts of the fin structure, wherein a top surface of the fin structure which is covered by the gate structure is defined as a first top surface, and a top surface of the fin structure which is not covered by the gate structure is defined as a second top surface, the first top surface being higher than the second top surface; and a spacer, covering sidewalls of the gate structure, wherein the spacer includes an inner spacer and an outer spacer, the outer spacer is disposed on an outer surface of the inner spacer, and the outer spacer contacts the second top surface of the fin structure directly, and parts of the outer spacer are disposed right under the inner spacer, in addition, the outer spacer does not cover a top surface of the gate structure. |
