Method for manufacturing semiconductor device and manufacturing apparatus of semiconductor device

摘要

A semiconductor device including an oxide semiconductor and an organic resin film is manufactured in the following manner. Heat treatment is performed on a first substrate provided with an organic resin film over a transistor including an oxide semiconductor in a reduced pressure atmosphere; handling of the first substrate is performed in an atmosphere containing moisture as little as possible in an inert gas (e.g., nitrogen) atmosphere with a dew point of lower than or equal to −60° C., preferably with a dew point of lower than or equal to −75° C. without exposing the first substrate after the heat treatment to the air; and then, the first substrate is bonded to a second substrate that serves as an opposite substrate.

主权项

1. A method for manufacturing a semiconductor device comprising the steps of:
performing heat treatment in a reduced pressure atmosphere on a first substrate provided with a transistor and an organic film over the transistor; applying a sealant to the first substrate or a second substrate; disposing the first substrate and the second substrate so as to face each other, and bonding the first substrate and the second substrate with the sealant therebetween; and curing the sealant, wherein the organic film serves as a planarization film, and wherein the steps from performing the heat treatment to curing of the sealant are performed in succession in an atmosphere with a dew point of lower than or equal to −60° C. without exposure to the air.