Page or word-erasable composite non-volatile memory

摘要

A non-volatile memory includes bit lines, a first page-erasable sector including memory cells of a first type, and a second word-erasable or bit-erasable sector including memory cells of a second type. The memory cells of the first type comprise a single floating-gate transistor and the memory cells of the second type comprise a first floating-gate transistor and a second floating-gate transistor the floating gates of which are electrically coupled, the second floating-gate transistor of a memory cell of the second type enabling the memory cell to be individually erased.

主权项

1. A non-volatile memory on a semiconductor substrate, comprising:
bit lines, first memory cells of a first type each including a single floating-gate transistor, the floating-gate transistor of each of the first memory cells including a drain region electrically coupled to a first bit line of the bit lines, second memory cells of the first type each including a single floating-gate transistor, the floating-gate transistor of each of the second memory cells including a drain region electrically coupled to a second bit line of the bit lines, and memory cells of a second type each including:
a first floating-gate transistor including a floating gate and a drain region electrically coupled to the first bit line, anda second floating-gate transistor including a floating gate and a drain region electrically coupled to the second bit line, wherein the floating gate of the first floating-gate transistor is electrically coupled to the floating gate of the second floating-gate transistor, and the second floating-gate transistor comprises a tunnel dielectric layer and a permanently conductive region extending on an opposite side of the tunnel dielectric layer with respect to the floating gate of the second floating-gate transistor.