发明名称 VOLTAGE GENERATING CIRCUIT, SEMICONDUCTOR MEMORY APPARATUS HAVING THE SAME AND OPERATING METHOD
摘要 According to an embodiment of the present invention, a voltage generation circuit includes: a comparison unit which compares a reference voltage and a feedback voltage to output a comparison signal to a first node; an output unit which generates an internal voltage and a feedback voltage in response to a potential level applied to the first node; and a control unit which discharges the first node when a level of the internal voltage falls below a preset level.
申请公布号 KR20160113396(A) 申请公布日期 2016.09.29
申请号 KR20150038203 申请日期 2015.03.19
申请人 SK HYNIX INC. 发明人 JIN, HYUN JONG
分类号 G11C5/14 主分类号 G11C5/14
代理机构 代理人
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