| 摘要 |
The present specification discloses a capacitor which occupies a small space through a vertically stacked PIP/MIM parallel capacitor and has a high value. In the PIP/MIM parallel capacitor according to the present specification, a PIP capacitor can be stacked on a lower end part. An MIM capacitor can be stacked on the upper part. The capacitor comprises polysilicon layers, insulating layers, and metal layers. |
