| 摘要 |
PROBLEM TO BE SOLVED: To provide a power semiconductor module capable of improving the power-cycle resistance of a reflux diode formed on a wide band-gap substrate.SOLUTION: An SiC-SBD 2 having large static avalanche resistance is selected, and a static avalanche voltage of the SiC-SBD 2 is set to be lower than a dynamic avalanche voltage Vavd of an Si-IGBT 1, so that the thickness of the SiC-SBD 2 is thin, thereby reducing an on-voltage. On-loss is reduced by the reduction in the on-voltage, thereby improving the power-cycle resistance of the SiC-SBD 2. |
