| 摘要 |
A method and apparatus for the detection and classification defects in a silicon or semi-conductor structure, in particular using room temperature photoluminescence effects, is described. The method involves directing a high intensity beam of light at a surface of a sample of silicon or semi-conductor structure to be tested producing a photoluminescence image, producing a reflected light image, combining the information in the two images to detect, map and identify and/or characterize micro-defects in the silicon or semi-conductor structure.
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