| 摘要 |
A system and methods for very high rate deposition and etching using a separate, substantially enclosed plasma generation chamber within a conventional semiconductor-processing vacuum chamber. A pressure differential is established between the chambers and a low frequency, high flux density, highly dissociated plasma is generated within the smaller internal chamber and projected by the pressure differential to a selected region of the processing chamber. The gas composition, flow rates, power and pressure are readily tailored to the particular etching or deposition process. In addition, the small internal chamber can be rotated and translated to expand the area of coverage. Etch rates of up to 60,000 angstroms per minute and useful quality dielectric film deposition rates of up to approximately 6,000 angstroms per minute have been achieved to date.
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