发明名称 Semiconductor pressure sensor
摘要 A semiconductor pressure sensor has a sealing reference pressure chamber container formed by a cap and a metal bottom plate, a semiconductor pressure sensitive diaphragm to which pressure to be measured is applied on the side of the diaphragm opposite to the inside space of said container, and a circuit substrate having a circuit connected to a strain gauge mounted on the pressure sensitive diaphragm. The diaphragm is mounted to said bottom plate, and the circuit substrate is fixed to one side of a metal plate having a thermal expansion factor approximately equal to the thermal expansion factor of the circuit substrate material. The other side of the metal plate is fixed to said bottom plate only over a relatively small area. The arrangement reduces thermal stress to the circuit substrate.
申请公布号 US4563697(A) 申请公布日期 1986.01.07
申请号 US19830466125 申请日期 1983.02.14
申请人 FUJI ELECTRIC COMPANY, LTD. 发明人 MIURA, SHUNJI
分类号 G01L9/04;G01L9/00;(IPC1-7):H01L29/84 主分类号 G01L9/04
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