| 摘要 |
A hybrid semiconductor device comprises a heat sink (1) on which a plurality of semiconductor chips (2) are mounted, an insulating substrate (4) secured to the heat sink (1), conductive metallic layers (6, 7) formed on the insulating substrate (4), electrodes (6) formed on the semiconductor chips (2), first thin metallic wires (81) for connecting the electrodes (6) and the conductive metallic layers (6, 7) together, conductive intermediate members (3) integrally formed with the heat sink (1) and located higher than the heat sink (1), second thin metallic wires (82) for connecting the conductive intermediate members (3) to points to which the first thin metallic wires (81) are connected, and a molding member (50) for sealing and securing the above-mentioned elements (1, 2, 3, 4, 6, 7, 81, 82). With the above structure, jumpers (81, 82) are arranged in such a manner as not to short-circuit to the conductive metallic layers (6, 7) and other conductive members. Moreover, the hybrid semiconductor device can be manufactured at a low cost since its manufacturing process can reduce the number of steps. |
