Method of producing MOS type semiconductor device.

摘要

In production of a gate oxide film of the MOS type semiconductor device, oxygen is added with trichloroethane to effect oxidation at a temperature from 1000 DEG C to 1100 DEG C so as to suppress generation of electron trap in the oxide film and interface trap which would be caused when electrons are injected into the oxide film. Alternatively, gas containing chlorine is dissociated to form a polysilicon gate electrode of the MOS type semiconductor device, and thereafter the chlorine is diffused into a gate oxide film by heating process, thereby suppressing generation of electron trap in the oxide film and generation of interface trap caused by injection of electrons into the oxide film.