| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor laser that the directivity of a laser beam can be enhanced, and especially performance of a pulsation type laser can be improved, and to provide a method for manufacturing the same. <P>SOLUTION: In a laser element part 10A, a light control layer 22 is formed between a first n-type clad layer 21 and a second n-type clad layer 23. The light control layer 22 compensates a difference between the reflection index of an n-type clad layer consisting of the first n-type clad layer 21 and the second n-type clad layer 23 and the reflection index of a p-type clad layer consisting of a first p-type clad layer 25 and a second p-type clad layer 26. The light distribution of a light-emitting region 24a in an active layer 24 agrees with the active layer 24 and its neighboring regions, and so the light distribution is symmetrical to the active layer 24. Since the light absorption is increased in a saturable absorption region 24b, a pulsation margin is increased, and moreover, an FFP shape of light emitted from the active layer 24 is prevented from being spread in the vertical direction. <P>COPYRIGHT: (C)2004,JPO |
