| 摘要 |
<p>Disclosed is a semiconductor device incorporating a plurality of photodiodes (24,25) and comprising a prism (10) on the device surface. A first (33) and a second optical film (34) are deposited on the surface of a first photodiode (24). Furthermore, the first optical film (33) is formed on the surface of a second photodiode (25), and the second optical film (34) is provided at the periphery of the second photodiode (25). This structure securely protects the pn junction of the second photodiode during manufacture. In addition, a light-shielding metal film formed at the periphery of the photodiodes has an insulation film deposited thereon, the insulation film containing very low stress and providing high adhesiveness with respect to the prism. This arrangement enhances the reliability of the semiconductor device. <IMAGE></p> |
