发明名称 |
ELECTRIC CIRCUIT, LATCH CIRCUIT, ELECTRIC CIRCUIT APPARATUS, DISPLAY APPARATUS, AND ELECTRONIC EQUIPMENT |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide a circuit which is operable with low power consumption and at a high frequency and resistant to a variation in characteristic of thin film transistors (TFTs) by forming a data reading circuit operable with a low voltage signal. <P>SOLUTION: In order to perform operations securely, a high potential power supply is connected to a gate electrode of a P-type TFT to which data signals are inputted in such a manner that the TFT receiving data signals is turned off as much as possible during a non-operating period. Similarly, a low potential power supply is connected to a gate electrode of an N-type TFT. Switch TFTs are provided between the high potential power supply and the P-type TFT and between the low potential power supply and the N-type TFT so as to turn the TFT off as required. Similarly, switch TFTs are provided between a data signal input terminal and a P-type TFT and between a data signal input terminal and an N-type TFT such that a data signal can be inputted thereto as required. The switching is controlled by using a latch signal and an inverse latch signal. Therefore, a latch circuit without a level shifter can be produced which can operate with stability. <P>COPYRIGHT: (C)2004,JPO |
申请公布号 |
JP2003347904(A) |
申请公布日期 |
2003.12.05 |
申请号 |
JP20030067549 |
申请日期 |
2003.03.13 |
申请人 |
SEMICONDUCTOR ENERGY LAB CO LTD |
发明人 |
OSAME MITSUAKI |
分类号 |
G09G3/36;G09G3/20;G11C19/00;H03K3/037;H03K3/356 |
主分类号 |
G09G3/36 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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