发明名称 |
DIRECT MULTILEVEL THIN-FILM TRANSISTOR PRODUCTION METHOD |
摘要 |
<p>PCT No. PCT/FR94/00278 Sec. 371 Date Feb. 22, 1996 Sec. 102(e) Date Feb. 22, 1996 PCT Filed Mar. 15, 1994 PCT Pub. No. WO94/21102 PCT Pub. Date Sep. 29, 1994The present invention can be used to make integrated circuits on the same substrate as the active matrix owing to the possibility that it offers of connecting transistor gates to sources or drains of the same or other transistors, and thus be used in a "integrated drivers" technology. It is also possible to make different types of transistors and capacitances using this method, without adding any additional mask levels.</p> |
申请公布号 |
EP0689721(A1) |
申请公布日期 |
1996.01.03 |
申请号 |
EP19940909965 |
申请日期 |
1994.03.15 |
申请人 |
THOMSON-LCD |
发明人 |
SANSON, ERIC;SZYDLO, NICOLAS;HEPP, BERNARD |
分类号 |
G02F1/1343;G02F1/136;G02F1/1368;H01L21/336;H01L21/77;H01L21/84;H01L27/12;H01L29/49;H01L29/786;(IPC1-7):H01L27/12 |
主分类号 |
G02F1/1343 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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