发明名称 DIRECT MULTILEVEL THIN-FILM TRANSISTOR PRODUCTION METHOD
摘要 <p>PCT No. PCT/FR94/00278 Sec. 371 Date Feb. 22, 1996 Sec. 102(e) Date Feb. 22, 1996 PCT Filed Mar. 15, 1994 PCT Pub. No. WO94/21102 PCT Pub. Date Sep. 29, 1994The present invention can be used to make integrated circuits on the same substrate as the active matrix owing to the possibility that it offers of connecting transistor gates to sources or drains of the same or other transistors, and thus be used in a "integrated drivers" technology. It is also possible to make different types of transistors and capacitances using this method, without adding any additional mask levels.</p>
申请公布号 EP0689721(A1) 申请公布日期 1996.01.03
申请号 EP19940909965 申请日期 1994.03.15
申请人 THOMSON-LCD 发明人 SANSON, ERIC;SZYDLO, NICOLAS;HEPP, BERNARD
分类号 G02F1/1343;G02F1/136;G02F1/1368;H01L21/336;H01L21/77;H01L21/84;H01L27/12;H01L29/49;H01L29/786;(IPC1-7):H01L27/12 主分类号 G02F1/1343
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