发明名称 HEATING METHOD AND DEVICE FOR WAFER-POLISHING PLATE
摘要 PROBLEM TO BE SOLVED: To reduce unevenness of thickness to improve flatness by bringing a hot plate heated substantially uniformly into contact with the back of a wafer polishing plate to substantially uniformly solidifying wax applied to the surface of the wafer-polishing plate. SOLUTION: A heat conductive member 3 is heated by a heating element 2, and the back of a wafer-polishing plate 20 is made closely adhere to the heated heat conductive member 3 to be heated indirectly. Thus, wax applied to the surface of the wafer polishing plate 1 is solidified substantially uniformly. Accordingly, the wafer polishing plate 1 to which wax is applied is heated uniformly so that a raw material wafer can be stuck flat to the wafer polishing plate 1 to reduce unevenness of thickness of the mirror finished surface wafer in the polishing process to heighten flatness.
申请公布号 JPH10128657(A) 申请公布日期 1998.05.19
申请号 JP19960287831 申请日期 1996.10.30
申请人 M II M C KK 发明人 YOSHIMURA ICHIRO;ISHINO HIROSHIGE
分类号 B24B37/30;H01L21/304;H05B3/20 主分类号 B24B37/30
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