| 摘要 |
<p>FIELD: semiconductor instruments. SUBSTANCE: method involves deposition of indium columns on semiconductor materials with later connection of units constituting assembly, including matrices of photodetectors and commutator. Goal of invention is achieved by deposition of bimetallic sub-layer before deposition of indium on matrix elements. Said sub-layer consists of two sequentially deposited metals, one which is indium-wetted and is located in center of matrix element, and non-wetted which is located on rest of matrix. Then matrix is kept in high-frequency gas-discharge of gas mix for 10-40 s. Gas mix contains argon and freon-14 under partial pressures of respectively 80 and 20, and discharge power density within range of 0.06-0.20 W per sq. cm and subsequent heating up to 160-179 C. Height of columns depends on geometric size of indium-wetted sub-layer using condition h=S1*h1/S, where S1 is initial area of column base, h1 is its initial height, S is area of indium-wetted sub-layer. EFFECT: increased height of indium columns on matrix elements, increased reliability of assembling of photodetectors.</p> |
