| 摘要 |
A linear temperature sensor that incorporates passive bipolar semiconductor devices (D1, D2, D3, D4, C1) and is capable of high accuracy over a very wide temperature range. The passive bipolar semiconductor device splits a voltage drop between the bipolar semiconductor and a resistor (R1) such that the voltage drop varies approximately linearly in negative dependence on temperature. Optionally, the linearity may be improved by providing sufficient current to produce a self-heating effect which compensates for non-linear deviations in performance at low temperatures.
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