发明名称 Semiconductor device, microcomputer and flash memory
摘要 A semiconductor device whose characteristics are highly reliably regulated for circuits whose desired characteristics need to be realized without being affect by unevenness in device characteristics is to be provided. A replica MOS transistor for amperage measurement connected to an external measuring terminal is provided. A delay circuit and other circuits whose desired characteristics are to be realized have a constant current source MOS transistor formed in the same process as the replica MOS transistor, and a trimming voltage vtri is commonly applied to the respective gates of the constant current source MOS transistor and the replica MOS transistor. Trimming data determined on the basis of an amperage measured from the external measuring terminal are stored into a memory means such as an electrically rewritable non-volatile memory or the like. The trimming data determine the trimming voltage vtri.
申请公布号 US6477090(B2) 申请公布日期 2002.11.05
申请号 US20010939708 申请日期 2001.08.28
申请人 HITACHI, LTD.;HITACHI ULSI SYSTEMS CO., LTD. 发明人 YAMAKI TAKASHI;TAKEUCHI KAN;HIRAKI MITSURU;TANAKA TOSHIHIRO;SHINAGAWA YUTAKA;FUJITO MASAMICHI
分类号 G11C17/00;G11C5/00;G11C7/00;G11C11/413;G11C11/56;G11C16/02;G11C16/06;G11C16/28;G11C16/30;G11C29/00;G11C29/02;G11C29/14;H01L21/8247;H01L27/10;H01L27/115;H01L29/788;H01L29/792;H01L31/0336;(IPC1-7):G11C7/00 主分类号 G11C17/00
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