发明名称 |
Semiconductor device and method for manufacturing the same |
摘要 |
An insulated gate field effect transistor comprises a silicon channel region. The silicon is crystallized by heat annealing while a suitable metal element such as nickel helps the crystallization. The crystallization proceeds in the silicon film laterally from the portion where the nickel is directly introduced. The TFT is arranged in such a manner that the source-drain direction of the TFT is aligned with the direction of the crystal growth or intersects with the crystal growth direction at a desired direction.
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申请公布号 |
US6475840(B1) |
申请公布日期 |
2002.11.05 |
申请号 |
US19970831088 |
申请日期 |
1997.04.01 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
MIYANAGA AKIHARU;OHTANI HISASHI;TERAMOTO SATOSHI |
分类号 |
H01L21/20;H01L21/02;H01L21/324;H01L21/336;H01L21/77;H01L21/82;H01L21/84;H01L27/02;H01L27/12;H01L29/02;H01L29/78;H01L29/786;H01L49/00;(IPC1-7):H01L21/00 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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