发明名称 Non-volatile semiconductor memory device with writing sequence enabling early-stage judgement of writing
摘要 In the data writing sequence, judgement of writing is divided into two stages of judgement 1 and judgement 2. In the judgement 1, it is determined whether the data writing has been completed for at least one of a plurality of memory cells, and in the judgement 2, it is determined whether the data writing has been completed for all the memory cells. Changing the writing conditions for the judgements 1 and 2 enables judgement of the data writing in an early stage.
申请公布号 US6487115(B1) 申请公布日期 2002.11.26
申请号 US20010985744 申请日期 2001.11.06
申请人 MITSUBISHI DENKI KABUSHIKI KAISHA 发明人 TSURUDA TAKAHIRO
分类号 G11C16/02;G11C16/10;G11C16/12;(IPC1-7):G11C16/04 主分类号 G11C16/02
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