发明名称 Surface acoustic wave device
摘要 An exemplary surface acoustic wave device includes a DLC film, a zinc oxide film formed on the DLC film, and at least one interdigital transducer formed on the zinc oxide film. The DLC film has a nano-sized thickness Z(f), corresponding to the surface acoustic wave device having an operational frequency f ranging from 20 to 1,000 GHz, satisfying the condition (1): Z(f)=MxZ<SUB>0</SUB>/(f/f<SUB>0</SUB>), and Z(f)>=1 nanometer. The zinc oxide film has a nano-sized thickness Y(f), corresponding to the surface acoustic wave device having the operational frequency f, satisfying the condition (2): Y(f)=NxY<SUB>0</SUB>/(f/f<SUB>0</SUB>). The Z<SUB>0 </SUB>and Y<SUB>0 </SUB>respectively are the thicknesses of the DLC film and the zinc oxide film corresponding to an operational frequency f<SUB>0 </SUB>of the surface acoustic wave device.
申请公布号 US2007085446(A1) 申请公布日期 2007.04.19
申请号 US20060473982 申请日期 2006.06.23
申请人 HON HAI PRECISION INDUSTRY CO., LTD. 发明人 CHEN GA-LANE
分类号 H03H9/25 主分类号 H03H9/25
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