| 摘要 |
A semiconductor device is provided to prevent an increase of chip size by forming a bulk structure and an SOI structure on the same substrate. A semiconductor device includes a semiconductor layer(105), a first circuit block, and a second and third blocks. The semiconductor layer is arranged through an insulating layer(103) on a partial region of a semiconductor substrate(101). The first circuit block is formed on the semiconductor layer. The second and the third circuit blocks are formed in a predetermined interval through the first circuit block on the semiconductor substrate. The first circuit block is arranged between the second circuit block and the third circuit block. The second circuit block or the third circuit block is arranged to contact at least one side of the first circuit block.
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