| 摘要 |
<p>A method for manufacturing a NAND type flash memory device is provided to prevent the generation of hump by depositing thickly an interlayer dielectric on a predetermined structure with gate patterns, forming a photoresist layer on the predetermined structure except the gate patterns, and performing sequentially an etching process and a CMP process. A gate pattern composed of a tunnel oxide layer(102), a plurality of conductive layers and a hard mask layer is formed on a semiconductor substrate(100) with a cell region and a peripheral region. A junction region is formed in the substrate between gate patterns. A nitride layer(118) is formed on the entire surface of the resultant structure. An interlayer dielectric(120) with a predetermined thickness is formed on the resultant structure. A photoresist pattern is formed on the resultant structure except the gate patterns. An etching process is performed on the resultant structure. Then, a CMP process is performed.</p> |
