| 摘要 |
<p>A hard mask composition for a resist under layer, a method for preparing a semiconductor integrated circuit device by using the composition, and a semiconductor integrated circuit device prepared by the method are provided to improve the reproducibility of pattern, the adhesion to a resist, the resistance against a developing layer and storage stability. A hard mask composition comprises an organosilane-based polymer which is prepared by the reaction of at least one kind of compound represented by [R1O]3Si-R2 and has a polydispersity of 1.1-2; a solvent; and optionally an acid catalyst, wherein R1 is a C1-C5 alkyl group, an acetoxy group, or an oxime group; and R2 is H, a C1-C5 alkyl group, an aryl group, or an aralkyl group. Preferably the organosilane-based polymer is represented by the formula 2, wherein R2 is H, a C1-C5 alkyl group, an aryl group, or an aralkyl group.</p> |
