发明名称 Surface-emitting type wafer and method for manufacturing the same, and burn-in method for surface-emitting type wafers
摘要 To simplify the burn-in process and reduce its cost for a surface-emitting type wafer and its manufacturing method, and for a burn-in method for a surface-emitting type wafer. A surface-emitting type wafer includes a substrate 10 and a plurality of surface-emitting type elements 1 formed above the substrate 10 . Each of the surface-emitting type elements 1 includes a light emitting element section 20 , first and second electrodes 30, 32 for driving the light emitting element section 20 , and a rectification element section 40 . The rectification element section 40 is connected in parallel between the first and second electrodes 30, 32 , and has a rectification action in a reverse direction with respect to the light emitting element section 20 . The plurality of surface-emitting type elements 1 are connected in series in a direction in which forward directions of the respective light emitting element sections 20 coincide with one another.
申请公布号 US7365368(B2) 申请公布日期 2008.04.29
申请号 US20050189834 申请日期 2005.07.27
申请人 SEIKO EPSON CORPORATION 发明人 NISHIDA TETSUO;ONISHI HAJIME
分类号 H01L29/205;G01R31/30;H01L21/66;H01S5/026;H01S5/183 主分类号 H01L29/205
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