| 发明名称 | Nonvolatile variable resistance element | ||
| 摘要 | According to one embodiment, a nonvolatile variable resistance element includes a first electrode, a second electrode, a variable resistance layer, and a dielectric layer. The second electrode includes a metal element. The variable resistance layer is arranged between the first electrode and the second electrode. A resistance change is reversibly possible in the variable resistance layer according to move the metal element in and out. The dielectric layer is inserted between the second electrode and the variable resistance layer and has a diffusion coefficient of the metal element smaller than that of the variable resistance layer. | ||
| 申请公布号 | US9391272(B2) | 申请公布日期 | 2016.07.12 |
| 申请号 | US201414458785 | 申请日期 | 2014.08.13 |
| 申请人 | KABUSHIKI KAISHA TOSHIBA | 发明人 | Miyagawa Hidenori;Fujii Shosuke;Takashima Akira;Matsushita Daisuke |
| 分类号 | H01L45/00;H01L27/10;H01L27/24 | 主分类号 | H01L45/00 |
| 代理机构 | Oblon, McClelland, Maier & Neustadt, L.L.P | 代理人 | Oblon, McClelland, Maier & Neustadt, L.L.P |
| 主权项 | 1. A nonvolatile variable resistance element comprising: a first electrode; a second electrode comprising a metal element; a variable resistance layer provided between the first electrode and the second electrode, wherein the variable resistance layer comprises polycrystal silicon or monocrystal silicon; and a dielectric layer provided between the variable resistance layer and the second electrode, wherein the dielectric layer has a diffusion coefficient of the metal element smaller than that of the variable resistance layer; wherein the metal element is configured to go into the variable resistance layer from the second electrode via a material constituting the dielectric layer when a set voltage is applied between the first electrode and the second electrode. | ||
| 地址 | Tokyo JP | ||