Optoelectronic component

摘要

An optoelectronic component comprising a semiconductor body, a first connection layer, an insulation layer and a second connection layer, wherein the semiconductor body has an active region for generating electromagnetic radiation and the second connection layer comprises a first partial layer and a second partial layer is specified, wherein
the insulation layer electrically insulates the first connection layer from the second connection layer,the first partial layer is arranged between the second partial layer and the semiconductor body in a vertical direction,in a plan view of the semiconductor body the first connection layer overlaps the first partial layer and is spaced apart from the second partial layer in a lateral direction, andthe first connection layer has a first layer thickness and the second partial layer has a second layer thickness, wherein the first layer thickness and the second layer thickness differ from one another at most by 20%.

主权项

1. An optoelectronic component comprising a semiconductor body, a first connection layer, an insulation layer and a second connection layer, wherein the semiconductor body has an active region for generating electromagnetic radiation and the second connection layer comprises a first partial layer and a second partial layer, wherein
the insulation layer electrically insulates the first connection layer from the second connection layer, the first partial layer is arranged between the second partial layer and the semiconductor body in a vertical direction, in a plan view of the semiconductor body the first connection layer overlaps the first partial layer and is spaced apart from the second partial layer in a lateral direction, the first connection layer has a first layer thickness and the second partial layer has a second layer thickness, wherein the first layer thickness and the second layer thickness differ from one another at most by 20%, the first connection layer and the insulation layer have a substantially identical maximum vertical elevation in the regions in which the semiconductor body is covered by the first partial layer, so that the first connection layer and the insulation layer form a surface being remote from the semiconductor body and having reduced topography differences.