Selective gallium nitride regrowth on (100) silicon

摘要

A semiconductor structure including a (100) silicon substrate having a plurality openings located within the silicon substrate, wherein each opening exposes a surface of the silicon substrate having a (111) crystal plane. This structure further includes an epitaxial semiconductor material located on an uppermost surface of the (100) silicon substrate, and a gallium nitride material located adjacent to the surface of the silicon substrate having the (111) crystal plane and adjacent a portion of the epitaxial semiconductor material. The structure also includes at least one semiconductor device located upon and within the gallium nitride material and at least one other semiconductor device located upon and within the epitaxial semiconductor material.

主权项

1. A semiconductor structure comprising:
a (100) silicon substrate having a plurality openings located within the silicon substrate, wherein each opening exposes a surface of the silicon substrate having a (111) crystal plane; an epitaxial semiconductor material located directly on an uppermost surface of said (100) silicon substrate; a gallium nitride material located adjacent to the surface of the silicon substrate having the (111) crystal plane and adjacent a portion of said epitaxial semiconductor material, wherein said gallium nitride material has a bottommost surface that is located beneath a bottommost surface of said epitaxial semiconductor material and beneath said uppermost surface of said (100) silicon substrate; and at least one semiconductor device located upon and within said gallium nitride material and at least one other semiconductor device located upon and within said epitaxial semiconductor material.