Uniform-size bonding patterns

摘要

A semiconductor device, and a method of fabrication, is introduced. In an embodiment, one or more passivation layers are formed over a first substrate. Recesses are formed in the passivation layers and a first plurality of bonding pads and a second plurality of bonding pads are formed in the recesses. In an embodiment, the first plurality of bonding pads have a first width and a first pitch, and the second plurality of bonding pads have the first width and are grouped into clusters. The first plurality of bonding pads and the second plurality of bonding pads in the first substrate are aligned to a third plurality of bonding pads in a second substrate and are bonded using a direct bonding method.

主权项

1. A semiconductor device comprising:
a first substrate; a first passivation layer on a first side of the first substrate; a first plurality of bonding pads in the first passivation layer, the first plurality of bonding pads representing a pixel array region, the first plurality of bonding pads having a first width and a first pitch; and a second plurality of bonding pads in the first passivation layer, the second plurality of bonding pads providing electrical control signals, the second plurality of bonding pads having the first width.