Oxide thin film transistor with a metal oxide etch barrier layer, method of manufacturing the same and display device

摘要

Embodiments of the invention provide a thin film transistor, a method of manufacturing the same, an array substrate comprising the thin film transistor and a display device. The method of manufacturing the thin film transistor comprises steps of forming a gate electrode (220), a gate insulating layer (230), an oxide active layer (240), a source electrode (260) and a drain electrode (270) on a substrate (210). After forming the oxide active layer (240), the method further comprises a step of forming an etch barrier layer (250) of a metal oxide on the oxide active layer (240).

主权项

1. A method of manufacturing a thin film transistor, comprising steps of forming a gate electrode, a gate insulating layer, an oxide active layer, a source electrode and a drain electrode on a substrate,
wherein after forming the oxide active layer, the method further comprises a step of forming an etch barrier layer of a metal oxide on the oxide active layer, the step of forming the etch barrier layer of the metal oxide on the oxide active layer comprises: forming a metal layer on the oxide active layer; and oxidizing the metal layer to form the etch barrier layer of the metal oxide; and the step of forming the metal layer on the oxide active layer comprises: coating a solution comprising metal ions on the oxide active layer, and forming the metal layer on the oxide active layer by a chemical plating process.