| 发明名称 | Thin film transistor | ||
| 摘要 | A thin film transistor disposed on a substrate is provided. The thin film transistor includes a channel, a gate, a source, a drain and an etching stop layer. The channel is disposed above the substrate and is located between the etching stop layer and the source. The gate is disposed on the substrate and overlapped with the channel. The source is disposed between the channel and the substrate and electrically connected to the channel. The channel is disposed between the drain and the substrate. The etching stop layer is disposed between the drain and the channel and has a first through hole exposing a portion of the channel. The drain is filled in the first through hole of the etching stop layer and is electrically connected to the channel. The drain covers the channel completely. | ||
| 申请公布号 | US9397220(B2) | 申请公布日期 | 2016.07.19 |
| 申请号 | US201414467040 | 申请日期 | 2014.08.24 |
| 申请人 | Chunghwa Picture Tubes, LTD. | 发明人 | Huang Chin-Hai;Feng Chieh-Wei;Huang Szu-Chi;Lai Kune-Yu;Huang Yen-Yu |
| 分类号 | H01L29/786;G02F1/1368 | 主分类号 | H01L29/786 |
| 代理机构 | Jianq Chyun IP Office | 代理人 | Jianq Chyun IP Office |
| 主权项 | 1. A thin film transistor, disposed on a substrate, the thin film transistor comprising: a channel, disposed above the substrate; a gate, disposed on the substrate and overlapped with the channel; a source, disposed between the channel and the substrate and electrically connected to the channel; a drain, disposed between the drain and the substrate; and an etching stop layer, disposed between the drain and the channel, and having a first through hole exposing a portion of the channel, wherein the drain is filled in the first through hole of the etching stop layer and is electrically connected to the channel, and the drain covers the channel completely. | ||
| 地址 | Taoyuan TW | ||