| 发明名称 | Heterojunction bipolar transistor with two base layers | ||
| 摘要 | A heterojunction bipolar transistor includes a collector layer composed of a semiconductor containing GaAs as a main component; a base layer including a first base layer and a second base layer the first base layer forming a heterojunction with the collector layer and being composed of a semiconductor containing a material as a main component, the material being lattice-mismatched to the main component of the collector layer, the first base layer having a film thickness less than a critical thickness at which a misfit dislocation is introduced, the second base layer being joined to the first base layer and composed of a semiconductor containing a material as a main component, and the material being lattice-matched to the main component of the collector layer; and an emitter layer that forms a heterojunction with the second base layer. | ||
| 申请公布号 | US9397204(B2) | 申请公布日期 | 2016.07.19 |
| 申请号 | US201514848090 | 申请日期 | 2015.09.08 |
| 申请人 | Murata Manufacturing Co., Ltd. | 发明人 | Obu Isao;Umemoto Yasunari;Kurokawa Atsushi |
| 分类号 | H01L21/02;H01L29/66;H01L29/737;H01L29/10;H01L29/08;H01L29/205;H01L29/417 | 主分类号 | H01L21/02 |
| 代理机构 | Studebaker & Brackett PC | 代理人 | Studebaker & Brackett PC |
| 主权项 | 1. A heterojunction bipolar transistor comprising: a collector layer composed of a semiconductor containing GaAs as a main component; a first base layer that forms a heterojunction with the collector layer, the first base layer being composed of a semiconductor containing a material as a main component, the material being lattice-mismatched to the main component of the collector layer, and the first base layer having a film thickness less than a critical thickness at which a misfit dislocation is introduced; a second base layer joined to the first base layer, the second base layer being composed of a semiconductor containing a material as a main component, the material being lattice-matched to the main component of the collector layer; an emitter layer that forms a heterojunction with the second base layer, and in a state before the first base layer and the second base layer are joined together, the energy of the bottom of the conduction band of the second base layer is equal to or higher than a value obtained by subtracting the thermal energy of a free electron at room temperature from the energy of the bottom of the conduction band of the first base layer. | ||
| 地址 | Kyoto-fu JP | ||