Semiconductor integrated circuit apparatus and method of manufacturing the same

摘要

A semiconductor integrated circuit apparatus and a method of manufacturing the same are provided. The semiconductor integrated circuit apparatus includes a semiconductor substrate having an active island, a gate buried in a predetermined portion of the active island, a source and a drain formed at both sides of the gate, and a current blocking layer formed in the active island corresponding to a lower portion of the drain. When current flows in from the drain, the current blocking layer is configured to discharge the current into the inside of the semiconductor substrate through a lower portion of the source.

主权项

1. A method of manufacturing a semiconductor integrated circuit apparatus, the method comprising:
forming an active island by etching a semiconductor substrate by a predetermined depth; forming a gate region by etching a predetermined portion of the active island; forming a first impurity region in the active island by implanting a first impurity into the active island; forming a gate by burying a conductive material in the gate region; forming a current blocking layer by implanting an impurity having substantially the same conductivity as the first impurity region into lower portions of both sides of the gate; and forming a source and a drain by implanting an impurity having an opposite conductivity to the first impurity region above the current blocking layer.