Self-aligned gate electrode diffusion barriers

摘要

A structure that provides a diffusion barrier between two doped regions. The structure includes a diffusion barrier including a semiconductor layer comprising a first doped region and a second doped region; and a diffusion barrier separating the first doped region and the second doped region, wherein the diffusion barrier comprises a doped portion and a notch above the doped portion.

主权项

1. A semiconductor structure comprising:
a semiconductor layer comprising a first doped region including a first dopant and a second doped region including a second dopant; and a diffusion barrier separating the first doped region and the second doped region,
wherein the diffusion barrier comprises a third doped region including a third dopant different from the first dopant and the second dopant and a notch above the third doped region, wherein the notch has an asymmetric profile from a side view, wherein the notch forms a gap separating the first doped region and the second doped region, wherein the first doped region and the second doped region are oppositely doped, wherein the third doped region is a different region than the first doped region and the second doped region, wherein the first doped region is a different region than the second doped region, wherein the diffusion barrier is self-aligned between the first doped region and the second doped region.