发明名称 SEMICONDUCTOR DEVICE
摘要 The present invention provides a semiconductor device which reduces an inductance of wiring for bridge-connecting semiconductor switches and realizes a reduction in size. Within the semiconductor device formed are two controllable bridge-connected semiconductor switches 13a and 13b, an output terminal, positive/negative polarity DC terminals 2 and 3, and an insulating substrate 15a in which conductor layers 12, 17 and 19 having a conductor section and in an inner layer for bridge-connecting the semiconductor switches to the DC terminals on a surface thereof and insulating layers 16 and 18 are alternately laminated. The surface and inner-layer conductor layers 12 and 17 which interpose the insulating layer 16 therebetween are electrically connected by a conductor 20 passing through the insulating layer 16 interposed between the conductor layers 12 and 17. A current path (dotted line) is so provided as to allow current flowing through a bridge circuit for mounting the two semiconductor switches on the insulating substrate to flow in opposite directions between the conductor layers 12 and 17 which interpose the insulating layer 16 therebetween. <IMAGE>
申请公布号 EP1376696(A1) 申请公布日期 2004.01.02
申请号 EP20020713259 申请日期 2002.03.29
申请人 HITACHI, LTD. 发明人 SHIRAKAWA, SHINJI;MISHIMA, AKIRA;MASHINO, KEIICHI;INNAMI, TOSHIYUKI;FUJINO, SHINICHI;ANAN, HIROMICHI;OCHIAI, YOSHITAKA
分类号 H01L25/04;H01L23/538;H01L23/66;H01L25/07;H01L29/78;H02M7/00 主分类号 H01L25/04
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